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Preliminary W24LH8 32K x 8 CMOS STATIC RAM
GENERAL DESCRIPTION
The W24LH8 is a normal speed, very low power CMOS static RAM organized as 32768 x 8 bits that operates on a wide voltage range from 2.7V to 3.6V power supply. The W24LH8 family, W24LH870LE and W24LH8-70LI, can meet requirement of various operating temperature. This device is manufactured using Winbond's high performance CMOS technology.
FEATURES
*
* * *
Low power consumption: - Active: 156 mW (max.) - Standby: 10.8 W (max.) Access time: 70 nS 2.7V to 3.6V supply voltage Fully static operation
* * * * *
All inputs and outputs directly TTL compatible Three-state outputs Battery back-up operation capability Data retention voltage: 2V (min.) Packaged in 28-pin 600 mil DIP, 330 mil SOP and standard type one TSOP (8 mm x 13.4 mm)
PIN CONFIGURATIONS
BLOCK DIAGRAM
CLK GEN. A12 A14 R O W D E C O D E R PRECHARGE CKT.
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28-pin DIP
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VDD WE A13 A8 A9 A11
A2 A3 A4 A5 A6 A7 A13
CORE CELL ARRAY 512 ROWS 64 X 8 COLUMNS
OE
I/O1
A10 CS I/O8 I/O7 I/O6 I/O5 I/O4
I/O8
DATA CNTRL. CLK GEN.
I/O CKT. COLUMN DECODER
WE CS OE
A11 A10 A1 A0 A8 A9
PIN DESCRIPTION
OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 1 0 1 1 1 2 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2
28-pin TSOP
SYMBOL A0-A14 I/O1-I/O8 CS WE OE VDD VSS
DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Input Write Enable Input Output Enable Input Power Supply Ground
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Publication Release Date: January 1999 Revision A2
Preliminary W24LH8
TRUTH TABLE
CS H L L L OE X H L X WE X H H L MODE Not Selected Output Disable Read Write I/O1-I/O8 High Z High Z Data Out Data In VDD CURRENT ISB, ISB1 IDD IDD IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature SL Operating Temperature LE LI RATING -0.5 to +4.6 -0.5 to VDD +0.5 1.0 -65 to +150 0 to 70 -20 to 85 -40 to 85 UNIT V V W C C C C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.
Operating Characteristics
(VDD = 2.7V-3.6V; VSS = 0V; TA (C) = 0 to 70 for SL; -20 to 85 for LE; -40 to 85 for LI)
PARAMETER Input Low Voltage Input High Voltage Input Leakage Current Output Leakage Current
SYM. VIL VIH ILI ILO
TEST CONDITIONS VIN = VSS to VDD VI/O = VSS to VDD, CS = VIH (min.) or OE = VIH (min.) or WE = VIL (max.) IOL = +2.1 mA IOH = -1.0 mA
MIN. -0.5 +2.0 -1 -1
MAX. +0.6 VDD +0.5 +1 +1
UNIT V V A A
Output Low Voltage Output High Voltage
VOL VOH
2.2
0.4 -
V V
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Preliminary W24LH8
Operating Characteristics, continued
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Operating Power Supply Current Standby Power Supply Current
IDD ISB ISB1
CS = VIL (max.), I/O = 0 mA, Cycle = min. Duty = 100% CS = VIH (min.), Cycle = min. Duty = 100% CS VDD -0.2V
-
0.5
40 1 3
mA mA A
Note: Typical parameter is measured under ambient temperature TA = 25 C and VDD = 5V/ 3V.
CAPACITANCE
(VDD = 3.3V, TA = 25 C, f = 1 MHz)
PARAMETER Input Capacitance Input/Output Capacitance
SYM. CIN CI/O
CONDITIONS VIN = 0V VOUT = 0V
MAX. 6 8
UNIT pF pF
Note: These parameters are sampled but not 100% tested.
AC CHARACTERISTICS
AC Test Conditions
PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 0V to 2.4V 5 nS 1.5V See the drawing below CONDITIONS
AC Test Loads and Waveform
1 TTL OUTPUT 100 pF Including Jig and Scope
,
1 TTL OUTPUT 5 pF Including Jig and Scope (For TCLZ, TOLZ, TCHZ TOHZ, TWHZ, TOW )
2.4V 0V 5 nS
90% 10%
90% 10% 5 nS
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Publication Release Date: January 1999 Revision A2
Preliminary W24LH8
AC Characteristics, continued (VDD = 2.7V-3.6V; VSS = 0V; TA (C) = 0 to 70 for SL; -20 to 85 for LE; -40 to 85 for LI)
Read Cycle
PARAMETER Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to Output in High Z Output Disable to Output in High Z Output Hold from Address Change
These parameters are sampled but not 100% tested
SYMBOL TRC TAA TACS TAOE TCLZ* TOLZ* TCHZ* TOHZ* TOH
MIN. 70 10 5 10
MAX. 70 70 35 30 30 -
UNIT nS nS nS nS nS nS nS nS nS
Write Cycle
PARAMETER Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold from End of Write Write to Output in High Z Output Disable to Output in High Z Output Active from End of Write These parameters are sampled but not 100% tested CS, WE SYMBOL TWC TCW TAW TAS TWP TWR TDW TDH TWHZ* TOHZ* TOW MIN. 70 50 50 0 50 0 40 0 5 MAX. 25 25 UNIT nS nS nS nS nS nS nS nS nS nS nS
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Preliminary W24LH8
TIMING WAVEFORMS
Read Cycle 1
(Address Controlled)
TRC Address TOH DOUT TAA TOH
Read Cycle 2
(Chip Select Controlled)
CS TACS TCLZ DOUT TCHZ
Read Cycle 3
(Output Enable Controlled)
T RC Address TAA OE T AOE TOLZ CS TACS DOUT TCLZ T CHZ TOHZ TOH
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Publication Release Date: January 1999 Revision A2
Preliminary W24LH8
Timing Waveforms, continued
Write Cycle 1
TWC Address T WR OE
TCW CS TAW WE TAS TOHZ D OUT TDW DIN TDH (1, 4) T WP
Write Cycle 2
(OE = VIL Fixed)
T WC Address TCW CS TAW WE TAS TWP TWHZ (1, 4) TOH (2) TOW (3) TWR
D OUT
TDW DIN
TDH
Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from DOUT are the same as the data written to DIN during the write cycle. 3. DOUT provides the read data for the next address. 4. Transition is measured 500 mV from steady state with CL = 5 pF. This parameter is guaranteed but not 100% tested.
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Preliminary W24LH8
DATA RETENTION CHARACTERISTICS
(TA (C) = 0 to 70 for SL; -20 to 85 for LE; -40 to 85 for LI)
PARAMETER VDD for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time * Read Cycle Time
SYM. VDR IDDDR TCDR TR
TEST CONDITIONS CS VDD -0.2V CS VDD -0.2V, VDD = 3V See data retention waveform
MIN. 2.0 0 TRC*
TYP. MAX. UNIT 3 V A nS nS
DATA RETENTION WAVEFORM
VDD
0.9 V DD TCDR
VDR > 2V =
0.9 V DD TR
CS
VIH
> CS = V DD - 0.2V
VIH
ORDERING INFORMATION
PART NO. W24LH8-70SL W24LH8S-70SL W24LH8Q-70SL W24LH8-70LE W24LH8S-70LE W24LH8Q-70LE W24LH8-70LI W24LH8S-70LI W24LH8Q-70LI ACCESS TIME (nS) 70 70 70 70 70 70 70 70 70 OPERATING VOLTAGE (V) 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V 2.7V to 3.6V OPERATING TEMPERATURE (C) 0 to 70 0 to 70 0 to 70 -20 to 85 -20 to 85 -20 to 85 -40 to 85 -40 to 85 -40 to 85 PACKAGE 600 mil DIP 330 mil SOP Standard type one TSOP 600 mil DIP 330 mil SOP Standard type one TSOP 600 mil DIP 330 mil SOP Standard type one TSOP
Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure.
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Publication Release Date: January 1999 Revision A2
Preliminary W24LH8
PACKAGE DIMENSIONS
28-pin P-DIP
Dimension in Inches Dimension in mm
Symbol
Min. Nom. Max.
0.210 0.010 0.150 0.016 0.058 0.008 0.155 0.018 0.060 0.010 1.460 0.590 0.540 0.090 0.120 0 0.630 0.650 0.600 0.545 0.100 0.130 0.160 0.022 0.064 0.014 1.470 0.610 0.550 0.110 0.140 15 0.670 0.090
Min. Nom. Max.
5.33 0.25 3.81 0.41 1.47 0.20 3.94 0.46 1.52 0.25 37.08 14.99 13.72 2.29 3.05 0 16.00 16.51 15.24 13.84 2.54 3.30 4.06 0.56 1.63 0.36 37.34 15.49 13.97 2.79 3.56 15 17.02 2.29
D
28 15
A A1 A2 B B1 c D E E1 e1 L
a
E1
eA S Notes:
1 14
S
E c
A A2
A1
Base Plane Seating Plane
L B B1
e1
a
eA
1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension E1 does not include interlead flash. 3. Dimensions D & E1 include mold mismatch and are determined at the mold parting line. 4. Dimension B1 does not include dambar protrusion/intrusion. 5. Controlling dimension: Inches. 6. General appearance spec. should be based on final visual inspection spec.
28-pin SOP Wide Body
Dimension in Inches Dimension in mm
Symbol
Min. Nom. Max.
0.112 0.004 0.093 0.014 0.008 0.098 0.016 0.010 0.713 0.326 0.044 0.453 0.028 0.059 0.331 0.050 0.465 0.036 0.067 0.103 0.020 0.014 0.733 0.336 0.056 0.477 0.044 0.075 0.047 0.004 0 10
Min. Nom. Max.
2.85 0.10 2.36 0.36 0.20 2.49 0.41 0.25 18.11 8.28 1.12 11.51 0.71 1.50 8.41 1.27 11.81 0.91 1.70 2.62 0.51 0.36 18.62 8.53 1.42 12.12 1.12 1.91 1.19 0.10 0 10
28
15
e1
E
HE
L
Detail F
1 b 14
A A1 A2 b c D E e HE L LE S y Notes:
D
e1 c
A2 A
1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion/intrusion. 3. Dimensions D & E include mold mismatch . and determined at the mold parting line. 4. Controlling dimension: Inches. 5. General appearance spec should be based on final visual inspection spec.
S
e
y
A1
LE
See Detail F Seating Plane
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Preliminary W24LH8
Package Dimensions, continued
28-pin Standard Type One TSOP
HD
Symbol
Dimension In Inches Min. Nom. Max.
0.047 0.002 0.035 0.007 0.004 0.461 0.311 0.520 0.040 0.008 0.006 0.465 0.315 0.528 0.022 0.020 0.024 0.010 0.000 0 3 0.004 5 0.028 0.006 0.041 0.011 0.008 0.469 0.319 0.536
Dimension In mm Min. Nom. Max.
1.20 0.05 0.95 0.17 0.10 11.70 7.90 13.20 1.00 0.20 0.15 11.80 8.00 13.40 0.55 0.50 0.60 0.25 0.00 0 3 0.10 5 0.70 0.15 1.05 0.27 0.21 11.90 8.10 13.60
D c
1
e
E
b
A2 A
A A1 A2 b c D E HD e L L1 Y Y
L L1
A1
Controlling dimension: Millimeters
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Publication Release Date: January 1999 Revision A2
Preliminary W24LH8
VERSION HISTORY
VERSION A1 A2 DATE Nov. 1998 Jan. 1999 PAGE 1 3 Initial Issued Change low power consumption active: from 108 to 156 mW (max.) Change operating power supply current (IDD) from 30 to 40 mA (max.) DESCRIPTION
Headquarters
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006
Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab.
2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502
Note: All data and specifications are subject to change without notice.
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